The experiment will study the performance of various sensors that are radiation hard and viable candidates for use in the innermost vertex detector for the SLHC environment. To cope with the harsh environment, a variety of solutions have been pursued: diamond sensors, 3D sensors, MCZ planar silicon detectors made from MCZ wafers, epitaxial, p-type silicon wafers, and thin silicon detectors.
The experimenters wish to compare the performance of detectors in a test beam before and after irradiation. The experimenters plan to use a CMS pixel-based telescope. They will study the charge collection efficiency of the irradiated and unirradiated devices and the spatial resolution as a function of the track incident angle and will change the incident angle of the beam by moving the sensors, to investigate how the resolution varies with angle.
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